Shin YOKOYAMA

Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film
Takahiro KOBAYASHI Naoto MATSUO Akira HEYA Shin YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11  pp. 1112-1116
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
TFT, SiNX film, fixed charge, hump phenomenon, 
 Summary | Full Text:PDF(1.3MB)
A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO Shin YOKOYAMA Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12  pp. 1913-1917
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFET, low temperature, velocity overshoot, Sb, nonsteady-stationary effect, impact ionization, hot-carrier, 
 Summary | Full Text:PDF(491.7KB)
Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method
Takafumi SETO Shin YOKOYAMA Kikuo OKUYAMA Masataka HIROSE Toshiaki FUJII Hidetomo SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Vol. E79-C  No. 3  pp. 306-311
Type of Manuscript:  Special Section PAPER (Special Issue on Scientific ULSI Manufacturing Technology)
Category: Particle/Defect Control and Analysis
Keyword: 
contamination control, MOS device, fine particle, ultraviolet, photoelectron, 
 Summary | Full Text:PDF(533KB)