Shih-Tzung SU

High Ruggedness Power MOSFET Design by a Self-Align p+ Process
Feng-Tso CHIEN Ming-Hung LAI Shih-Tzung SU Kou-Way TU Ching-Ling CHENG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 694-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Power Devices
Power MOSFETunclamped inductive load switching (UIS)ruggedness
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