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An InGaP/GaAs Composite Channel FET for High Power Device Applications Shigeru NAKAJIMA Ken NAKATA Kunio TANAKA Kenji OTOBE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10
pp. 1300-1305
Type of Manuscript:
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: high power device, InGaP, FET, electron transport, | | Summary | Full Text:PDF | |
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FOREWORD Shigeru NAKAJIMA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/04/25
Vol. E77-C
No. 4
pp. 527-527
Type of Manuscript:
FOREWORD Category: Keyword:
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