Shigeru KURODA

Nonalloyed Ohmic Contacts for HEMTs Using n+-lnGaAs Layers Grown by MOVPE
Mizuhisa NIHEI Naoki HARA Haruyoshi SUEHIRO Shigeru KURODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1431-1436
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
nonalloyed ohmic contact, n+-InGaAs, MOVPE, HEMT, 
 Summary | Full Text:PDF
N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA Shigeru KURODA Kohki HIKOSAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C  No. 10  pp. 1165-1171
Type of Manuscript:  Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category: 
Keyword: 
HEMT, InGaAs, Schottky junction, DCEL, dry etching, 
 Summary | Full Text:PDF