IEICE Trans

Shigeru KISHIMOTO

Improvement of the Interface Quality of the Al₂O₃/_III-Nitride Interface by (NH₄)₂S Surface Treatment for AlGaN/GaN MOSHFETs Eiji MIYAZAKI Shigeru KISHIMOTO Takashi MIZUTANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-C No. 8 pp. 1337-1342 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: GaN MOS diodes, Al₂O₃/AlGaN/GaN MOSHFETs, (NH₄)₂S, interface state density,
	Summary \| Full Text:PDF

Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1001-1003 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: enhancement, GaN, MOSFETs, HfO₂,
	Summary \| Full Text:PDF

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 1025-1030 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Novel Integration Technology Keyword: heterogeneous integration, fluidic self-assembly, HEMT, SPDT switch, SOI,
	Summary \| Full Text:PDF

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-C No. 7 pp. 989-993 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: normally-off, AlGaN/GaN, HEMT, InGaN cap,
	Summary \| Full Text:PDF

Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation Youhei OOKAWA Shigeru KISHIMOTO Koichi MAEZAWA Takashi MIZUTANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 999-1004 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: negative differential resistance, resonant tunneling, oscillator,
	Summary \| Full Text:PDF

Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs Takashi MIZUTANI Makoto YAMAMOTO Shigeru KISHIMOTO Koichi MAEZAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 pp. 1318-1322 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: low-frequency noise, HEMT, Arrhenius plot, DX center, Lorentz noise,
	Summary \| Full Text:PDF

Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation Yutaka OHNO Shigeru KISHIMOTO Takashi MIZUTANI Koichi MAEZAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/11/25 Vol. E79-C No. 11 pp. 1530-1536 Type of Manuscript: Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies) Category: Keyword: resonant tunneling transistor, MOBILE, operation speed, negative differential resistance, capacitance,
	Summary \| Full Text:PDF