Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/08/01 Vol. E95-CNo. 8pp. 1337-1342 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011) Category: GaN-based Devices Keyword: GaN MOS diodes, Al2O3/AlGaN/GaN MOSHFETs, (NH4)2S, interface state density,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1001-1003 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: enhancement, GaN, MOSFETs, HfO2,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 989-993 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: normally-off, AlGaN/GaN, HEMT, InGaN cap,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7pp. 999-1004 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: negative differential resistance, resonant tunneling, oscillator,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-CNo. 10pp. 1318-1322 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: low-frequency noise, HEMT, Arrhenius plot, DX center, Lorentz noise,