Shigeru KISHIMOTO


Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs
Eiji MIYAZAKI Shigeru KISHIMOTO Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1337-1342
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
GaN MOS diodesAl2O3/AlGaN/GaN MOSHFETs(NH4)2Sinterface state density
 Summary | Full Text:PDF

Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide
Shun SUGIURA Shigeru KISHIMOTO Takashi MIZUTANI Masayuki KURODA Tetsuzo UEDA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1001-1003
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
enhancementGaNMOSFETsHfO2
 Summary | Full Text:PDF

A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
Koichi MAEZAWA Ikuo SOGA Shigeru KISHIMOTO Takashi MIZUTANI Kazuhiro AKAMATSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Novel Integration Technology
Keyword: 
heterogeneous integrationfluidic self-assemblyHEMTSPDT switchSOI
 Summary | Full Text:PDF

Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
Masafumi ITO Shigeru KISHIMOTO Fumihiko NAKAMURA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 989-993
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
normally-offAlGaN/GaNHEMTInGaN cap
 Summary | Full Text:PDF

Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation
Youhei OOKAWA Shigeru KISHIMOTO Koichi MAEZAWA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 999-1004
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
negative differential resistanceresonant tunnelingoscillator
 Summary | Full Text:PDF

Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
Takashi MIZUTANI Makoto YAMAMOTO Shigeru KISHIMOTO Koichi MAEZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1318-1322
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
low-frequency noiseHEMTArrhenius plotDX centerLorentz noise
 Summary | Full Text:PDF

Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation
Yutaka OHNO Shigeru KISHIMOTO Takashi MIZUTANI Koichi MAEZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1530-1536
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
resonant tunneling transistorMOBILEoperation speednegative differential resistancecapacitance
 Summary | Full Text:PDF