Shigeki TOMISHIMA

A Long Data Retention SOI DRAM with the Body Refresh Function
Shigeki TOMISHIMA Fukashi MORISHITA Masaki TSUKUDE Tadato YAMAGATA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7  pp. 899-904
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
memory, SOI-DRAM, body region, refresh, data retention, 
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SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories
Shigehiro KUGE Fukashi MORISHITA Takahiro TSURUDA Shigeki TOMISHIMA Masaki TSUKUDE Tadato YAMAGATA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/07/25
Vol. E79-C  No. 7  pp. 997-1002
Type of Manuscript:  Special Section PAPER (Special Issue on the 1995 Symposium on VLSI Circuits (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.31, No.4 April 1996))
Category: Memory
Keyword: 
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A Blanket Source Line Architecture with Triple Metal for Giga Scale Memory LSIs
Shigeki TOMISHIMA Shigehiro KUGE Masaki TSUKUDE Tadato YAMAGATA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 808-811
Type of Manuscript:  Special Section LETTER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
Keyword: 
memory, triple metal, source line, layout, 
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A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's
Tsukasa OOISHI Mikio ASAKURA Shigeki TOMISHIMA Hideto HIDAKA Kazutami ARIMOTO Kazuyasu FUJISHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/05/25
Vol. E77-C  No. 5  pp. 762-770
Type of Manuscript:  Special Section PAPER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
Category: 
Keyword: 
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