Shigeki KURODA


Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
Kazuhiko KAI Shigeki KURODA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 129-133
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
process simulationmodel for silicide growthSALICIDEsilicidationtitanium disilicideMOSFET
 Summary | Full Text:PDF

Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down
Shigeki KURODA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 145-149
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
simulationlocal oxidation of siliconstress redistributionviscoelastic modelfinite element method
 Summary | Full Text:PDF