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Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements Chinchun MENG Bo-Chen TSOU Sheng-Che TSENG | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C
No. 6
pp. 1127-1132
Type of Manuscript:
Special Section PAPER (Special Section on Analog Circuit and Device Technologies) Category: Device Keyword: GaInP/GaAs HBT, emitter ledge, transit time measurement, | | Summary | Full Text:PDF | |
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