Seung-Hyun SONG

Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
Seung-Hyun SONG Jae-Chul KIM Sung-Woo JUNG Yoon-Ha JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 761-766
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
GIDLjunctionhalonanoscale CMOS
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