Seiki GOTO


High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications
Hirotaka AMASUGA Toshihiko SHIGA Masahiro TOTSUKA Seiki GOTO Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 676-682
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
millimeter-waveGaAspHEMThumiditypower densitybreakdown voltage
 Summary | Full Text:PDF

A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
Seiki GOTO Kenichi FUJII Tetsuo KUNII Satoshi SUZUKI Hiroshi KAWATA Shinichi MIYAKUNI Naohito YOSHIDA Susumu SAKAMOTO Takashi FUJIOKA Noriyuki TANINO Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1936-1942
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
high-power FETHFETbase stationlow distortionmicrowave
 Summary | Full Text:PDF