Seiji FUJINO


Convergence Comparison on the IDR(s)-Based IPNMs for Electromagnetic Multiple Scattering Simulations
Norimasa NAKASHIMA Seiji FUJINO 
Publication:   
Publication Date: 2019/01/01
Vol. E102-C  No. 1  pp. 51-55
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
iterative progressive numerical methodsIDR(s)-based linear solverselectromagnetic wave multiple scattering
 Summary | Full Text:PDF(752.3KB)

The IDR-Based IPNMs for the Fast Boundary Element Analysis of Electromagnetic Wave Multiple Scattering
Norimasa NAKASHIMA Seiji FUJINO Mitsuo TATEIBA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/01/01
Vol. E95-C  No. 1  pp. 63-70
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Electromagnetic Theory and Its Application)
Category: Numerical Techniques
Keyword: 
iterative progressive numerical methodsIDR-based linear iterative solverselectromagnetic wave multiple scatteringboundary element method
 Summary | Full Text:PDF(942.1KB)

A 25 kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET
Kazunori KAWAMOTO Kenji KOHNO Yasushi HIGUCHI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 823-831
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
LDMOSFETESDstatic dischargethick SOI
 Summary | Full Text:PDF(1.7MB)

A 200 V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
Kazunori KAWAMOTO Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2  pp. 260-266
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
high voltage CMOSthick SOItrench isolationEL driverLDMOS
 Summary | Full Text:PDF(1.3MB)

Implementation of the Multicolored SOR Method on a Vector Supercomputer
Seiji FUJINO Ryutaro HIMENO Akira KOJIMA Kazuo TERADA 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 1997/04/25
Vol. E80-D  No. 4  pp. 518-523
Type of Manuscript:  Special Section PAPER (Special Issue on Parallel and Distributed Supercomputing)
Category: 
Keyword: 
multicolorSOR methodPDEvector lengthstencil
 Summary | Full Text:PDF(418.5KB)

Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
Seiji FUJINO Kazuhiro TSURUTA Akiyoshi ASAI Tadashi HATTORI Yoshihiro HAMAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/12/25
Vol. E78-C  No. 12  pp. 1773-1778
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SOIthreshold voltagewafer direct bondingfloating back gateelectric charge injectionring oscillator
 Summary | Full Text:PDF(647.6KB)

Phenomenon and Mechanism of CMOS Latch-up Induced by Substrate Voltage Fluctuation in Thick Film SOI Structure
Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Tadashi HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1447-1452
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
latch-upthick film SOIsubstrate voltage fluctuationcross-talk
 Summary | Full Text:PDF(502.8KB)

Bevel Style High Voltage Power Transistor for Power IC
Kazuhiro TSURUTA Mitsutaka KATADA Seiji FUJINO Tadashi HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1459-1464
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
power transistorwafer direct bondingbeveled structurehigh voltageSOI
 Summary | Full Text:PDF(546.9KB)