Seiichiro KAWAMURA

Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--
Mitsuru YAMAJI Kenji TANIGUSHI Chihiro HAMAGUCHI Kazuo SUKEGAWA Seiichiro KAWAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 373-378
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
SOI-MOSFET, hot carrier, photon emission, hole trap, impact-ionization, electron-hole recombination, 
 Summary | Full Text:PDF(560KB)
Hot-Carrier-Induced Photon Emission in Thin SOI/MOSFETs
Seiichiro KAWAMURA Takami MAKINO Kazuo SUKEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1471-1476
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
Keyword: 
hot-carrier, photon emission, thin SOI, carrier temperature, 
 Summary | Full Text:PDF(657.7KB)
Effects of Hot Electron Trapping in Ultra-Thin-Film SOI/SIMOX pMOSFET's
Kazuo SUKEGAWA Seiichiro KAWAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1484-1490
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
Keyword: 
SIMOX, MOSFET, hot carrier effect, electron trapping, 
 Summary | Full Text:PDF(575.5KB)