IEICE Trans

Seiichi MIYAZAKI

Magnetic-Field Dependent Electron Transport of Fe₃Si Nanodots Jialin WU Katsunori MAKIHARA Hai ZHANG Noriyuki TAOKA Akio OHTA Seiichi MIYAZAKI
Publication: Publication Date: 2022/10/01 Vol. E105-C No. 10 pp. 616-621 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: nanodots, Fe-silicide, hydrogen plasma,
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Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures Katsunori MAKIHARA Tatsuya TAKEMOTO Shuji OBAYASHI Akio OHTA Noriyuki TAOKA Seiichi MIYAZAKI
Publication: Publication Date: 2022/10/01 Vol. E105-C No. 10 pp. 610-615 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si quantum dots, phosphorus, δ-doping, electron emission,
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Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots Yuto FUTAMURA Katsunori MAKIHARA Akio OHTA Mitsuhisa IKEDA Seiichi MIYAZAKI
Publication: Publication Date: 2019/06/01 Vol. E102-C No. 6 pp. 458-461 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si quantum dots, Ge core, electron field emission, multiple-stacked structure, electric field concentration,
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Embedding of Ti Nanodots into SiO_x and Its Impact on Resistance Switching Behaviors Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: Publication Date: 2017/05/01 Vol. E100-C No. 5 pp. 468-474 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memories (ReRAMs), Ti-nanodots (NDs), Si-rich oxide (SiO_x),
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Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements Akio OHTA Chong LIU Takashi ARAI Daichi TAKEUCHI Hai ZHANG Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-C No. 5 pp. 406-410 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Resistive Random Access Memory (ReRAM), Metal Nano-dots (NDs), Si Oxide (SiO_x), MIM Diodes, Atomic Force Microscope (AFM),
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Selective Growth of Self-Assembling Si and SiGe Quantum Dots Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/05/01 Vol. E97-C No. 5 pp. 393-396 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: self-assembling Si quantum dots, selective growth, low pressure chemical vapor deposition,
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High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2014/05/01 Vol. E97-C No. 5 pp. 397-400 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si nano-columnar structure, AFM, current image, electron emission,
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Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 702-707 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Resistive Random Access Memory (ReRAM), Si oxide, Pt electrodes, chemical bonding features, resistance switching,
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Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 718-721 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si nanocolumnar structure, AFM, current image, electron emission,
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X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI Masao SAKURABA Junichi MUROTA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 680-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: silicon germanium, heterostructure, chemical bonding features, valence band alignment, X-ray photoelectron spectroscopy,
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Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 674-679 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Ge-channel, high-k dielectrics, interfacial control layer, X-ray photoelectron spectroscopy, energy band alignment,
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Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System Motoki FUKUSIMA Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 708-713 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memory (ReRAM), Si oxide, chemical bonding features, X-ray photoelectron spectroscopy, resistance switching property,
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Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 694-698 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: silicon quantum dot, silicide nanodot, hybrid floating gate, optical response,
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Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 879-884 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memory (ReRAM), Si oxide, RF sputtering, Pt electrodes, resistance switching,
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Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 699-704 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ReRAM, TiO₂, low temperature, H₂ annealing, charge trapping,
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Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 717-723 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high-k gate dielectrics, capping layer, HfO₂, MgO, photoemission measurements,
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 730-736 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor,
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Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Katsunori MAKIHARA Mitsuhisa IKEDA Akira KAWANAMI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 569-572 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: Si quantum dots, random telegraph signals, AFM/KFM,
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Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro SHIMANOE Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 616-619 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Pd nanodot, remote hydrogen plasma, floating gate MOS memory,
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Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO₂ Structure as Evaluated by AFM/KFM Katsunori MAKIHARA Mitsuhisa IKEDA Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 712-715 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si quantum dots, AFM/KFM,
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Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 962-967 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: HfSiO_xN_y, metal gate, leakage current, charge trapping, TDDB,
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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation Hideki MURAKAMI Wataru MIZUBAYASHI Hirokazu YOKOI Atsushi SUYAMA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 640-645 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: high-k dielectrics, aluminum oxide, reliability, MISFET,
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Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate Hideki MURAKAMI Yoshikazu MORIWAKI Masafumi FUJITAKE Daisuke AZUMA Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 646-650 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: SiGe gate, gate depletion,
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Characterization of Germanium Nanocrystallites Grown on SiO₂ by a Conductive AFM Probe Technique Katsunori MAKIHARA Yoshihiro OKAMOTO Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 705-708 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: nanocrystal, AFM, conducting probe, local characterization,
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Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 709-712 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: silicon quantum dot, MOS memory, floating gate, Coulomb blockade,
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FOREWORD Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 pp. 1-1 Type of Manuscript: FOREWORD Category: Keyword:
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Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces Tatsuhiro YASAKA Masaru TAKAKURA Kenichi SAWARA Shigeo UENAGA Hiroshi YASUTAKE Seiichi MIYAZAKI Masataka HIROSE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 pp. 764-769 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: HF-treated Si, hydrogen termination, layer-by-layer oxidation, XPS, FT-IR-ATR,
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