Seiichi MIYAZAKI


Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
Yuto FUTAMURA Katsunori MAKIHARA Akio OHTA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 458-461
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si quantum dotsGe coreelectron field emissionmultiple-stacked structureelectric field concentration
 Summary | Full Text:PDF

Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Yusuke KATO Akio OHTA Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 468-474
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memories (ReRAMs)Ti-nanodots (NDs)Si-rich oxide (SiOx)
 Summary | Full Text:PDF

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
Akio OHTA Chong LIU Takashi ARAI Daichi TAKEUCHI Hai ZHANG Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5  pp. 406-410
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Metal Nano-dots (NDs)Si Oxide (SiOx)MIM DiodesAtomic Force Microscope (AFM)
 Summary | Full Text:PDF

Selective Growth of Self-Assembling Si and SiGe Quantum Dots
Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 393-396
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
self-assembling Si quantum dotsselective growthlow pressure chemical vapor deposition
 Summary | Full Text:PDF

High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy
Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 397-400
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si nano-columnar structureAFMcurrent imageelectron emission
 Summary | Full Text:PDF

Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System
Motoki FUKUSIMA Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 708-713
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM)Si oxidechemical bonding featuresX-ray photoelectron spectroscopyresistance switching property
 Summary | Full Text:PDF

Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki HASHIMOTO Akio OHTA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 674-679
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Ge-channelhigh-k dielectricsinterfacial control layerX-ray photoelectron spectroscopyenergy band alignment
 Summary | Full Text:PDF

Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy
Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 718-721
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si nanocolumnar structureAFMcurrent imageelectron emission
 Summary | Full Text:PDF

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures
Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 694-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon quantum dotsilicide nanodothybrid floating gateoptical response
 Summary | Full Text:PDF

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures
Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI Masao SAKURABA Junichi MUROTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 680-685
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon germaniumheterostructurechemical bonding featuresvalence band alignmentX-ray photoelectron spectroscopy
 Summary | Full Text:PDF

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 702-707
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Resistive Random Access Memory (ReRAM)Si oxidePt electrodeschemical bonding featuresresistance switching
 Summary | Full Text:PDF

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
Akio OHTA Yuta GOTO Shingo NISHIGAKI Guobin WEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 879-884
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
resistive random access memory (ReRAM)Si oxideRF sputteringPt electrodesresistance switching
 Summary | Full Text:PDF

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 699-704
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
ReRAMTiO2low temperatureH2 annealingcharge trapping
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Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities
Akio OHTA Daisuke KANME Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 717-723
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
high-k gate dielectricscapping layerHfO2MgOphotoemission measurements
 Summary | Full Text:PDF

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamicscollective motion of electronSi-nano dottwo-dimensional electron gastunnelingSi-nano dot type floating gate MOS capacitor
 Summary | Full Text:PDF

Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
Katsunori MAKIHARA Mitsuhisa IKEDA Akira KAWANAMI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 569-572
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
Si quantum dotsrandom telegraph signalsAFM/KFM
 Summary | Full Text:PDF

Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
Kazuhiro SHIMANOE Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 616-619
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Pd nanodotremote hydrogen plasmafloating gate MOS memory
 Summary | Full Text:PDF

Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM
Katsunori MAKIHARA Mitsuhisa IKEDA Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 712-715
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si quantum dotsAFM/KFM
 Summary | Full Text:PDF

Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors
Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 962-967
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
HfSiOxNymetal gateleakage currentcharge trappingTDDB
 Summary | Full Text:PDF

Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate
Hideki MURAKAMI Yoshikazu MORIWAKI Masafumi FUJITAKE Daisuke AZUMA Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 646-650
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
SiGe gategate depletion
 Summary | Full Text:PDF

Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation
Hideki MURAKAMI Wataru MIZUBAYASHI Hirokazu YOKOI Atsushi SUYAMA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 640-645
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
high-k dielectricsaluminum oxidereliabilityMISFET
 Summary | Full Text:PDF

Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique
Katsunori MAKIHARA Yoshihiro OKAMOTO Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 705-708
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Nanomaterials and Quantum-Effect Devices
Keyword: 
nanocrystalAFMconducting probelocal characterization
 Summary | Full Text:PDF

Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
Taku SHIBAGUCHI Mitsuhisa IKEDA Hideki MURAKAMI Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 709-712
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Nanomaterials and Quantum-Effect Devices
Keyword: 
silicon quantum dotMOS memoryfloating gateCoulomb blockade
 Summary | Full Text:PDF

FOREWORD
Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 1-1
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF

Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces
Tatsuhiro YASAKA Masaru TAKAKURA Kenichi SAWARA Shigeo UENAGA Hiroshi YASUTAKE Seiichi MIYAZAKI Masataka HIROSE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7  pp. 764-769
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
HF-treated Sihydrogen terminationlayer-by-layer oxidationXPSFT-IR-ATR
 Summary | Full Text:PDF