Satoshi TANIGUCHI


Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities
Hideki ONO Satoshi TANIGUCHI Toshi-kazu SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1020-1024
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
impurity diffusioncurrent-enhanced diffusiondefectstunnel diodesmetamorphic devicesInGaAscarbon
 Summary | Full Text:PDF(658.6KB)