IEICE Trans

Satoshi KAMIYAMA

Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT Yoshikazu HIROSE Akira HONSHIO Takeshi KAWASHIMA Motoaki IWAYA Satoshi KAMIYAMA Michinobu TSUDA Hiroshi AMANO Isamu AKASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 pp. 1064-1067 Type of Manuscript: Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN HEMT, contact resistance, transconductance,
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Suppression of Charges in Al₂O₃ Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 pp. 30-36 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ gate dielectric, aluminum oxide, plasma nitridation, fixed charge, MOSFET performance,
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The Evolution of Nitride-Based Light-Emitting Devices Isamu AKASAKI Satoshi KAMIYAMA Hiroshi AMANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/01/01 Vol. E85-C No. 1 pp. 2-9 Type of Manuscript: INVITED PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices) Category: Keyword: nitride semiconductors, MOVPE, low-temperature buffer layer, conductivity control, blue light-emitting devices,
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Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes Toshiyuki SATO Motoaki IWAYA Kimio ISOMURA Tsutomu UKAI Satoshi KAMIYAMA Hiroshi AMANO Isamu AKASAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/04/25 Vol. E83-C No. 4 pp. 573-578 Type of Manuscript: Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies) Category: Keyword: GaN-based semiconductor laser-diode, transverse-mode, ridge-waveguide structure, 2-step grown index-guided structure,
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Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs Satoshi KAMIYAMA Hiroshi SUZUKI Pierre-Yves LESAICHERRE Akihiko ISHITANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-C No. 3 pp. 379-384 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Device Technology Keyword: tantalum oxide, rapid thermal nitridation (RTN), SiO₂ equivalent thickness, leakage current, time dependent dielectric breakdown (TDDB),
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Trends in Capacitor Dielectrics for DRAMs Akihiko ISHITANI Pierre-Yves LESAICHERRE Satoshi KAMIYAMA Koichi ANDO Hirohito WATANABE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/11/25 Vol. E76-C No. 11 pp. 1564-1581 Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories) Category: Keyword: capacitor, dielectrics, Si₃N₄, Ta₂O₅, high permittivity materials, 256 Mbit, 1 Gbit, DRAM,
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