Satoshi KAMIYAMA


Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
Yoshikazu HIROSE Akira HONSHIO Takeshi KAWASHIMA Motoaki IWAYA Satoshi KAMIYAMA Michinobu TSUDA Hiroshi AMANO Isamu AKASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1064-1067
Type of Manuscript:  Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HEMTcontact resistancetransconductance
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Suppression of Charges in Al2O3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation
Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 30-36
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricaluminum oxideplasma nitridationfixed chargeMOSFET performance
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The Evolution of Nitride-Based Light-Emitting Devices
Isamu AKASAKI Satoshi KAMIYAMA Hiroshi AMANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1  pp. 2-9
Type of Manuscript:  INVITED PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
nitride semiconductorsMOVPElow-temperature buffer layerconductivity controlblue light-emitting devices
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Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes
Toshiyuki SATO Motoaki IWAYA Kimio ISOMURA Tsutomu UKAI Satoshi KAMIYAMA Hiroshi AMANO Isamu AKASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 573-578
Type of Manuscript:  Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaN-based semiconductor laser-diodetransverse-moderidge-waveguide structure2-step grown index-guided structure
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Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs
Satoshi KAMIYAMA Hiroshi SUZUKI Pierre-Yves LESAICHERRE Akihiko ISHITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
tantalum oxiderapid thermal nitridation (RTN)SiO2 equivalent thicknessleakage currenttime dependent dielectric breakdown (TDDB)
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Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI Pierre-Yves LESAICHERRE Satoshi KAMIYAMA Koichi ANDO Hirohito WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11  pp. 1564-1581
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
capacitordielectricsSi3N4Ta2O5high permittivity materials256 Mbit1 GbitDRAM
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