Sanghyun SEO


Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlNAlN/GaN MISFETAlN/GaN HFETwide-bandgapfrequency-dispersion
 Summary | Full Text:PDF(1MB)

AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
Sanghyun SEO Kaustav GHOSE Guang Yuan ZHAO Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 994-1000
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlNMISFETsHFETsDrift-diffusion simulations
 Summary | Full Text:PDF(567.6KB)