Sanggi KIM


Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung CHO Kunsik PARK Jongil WON Sanggi KIM Kwansgsoo KIM 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 439-445
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon carbide (SiC)junction termination extension (JTE)edge terminationpower device
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