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| Sadao NAKASHIMA
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High-Quality Low-Dose SIMOX Wafers
Sadao NAKASHIMA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C
No. 3
pp. 364-369
Type of Manuscript:
INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword:
SOI, SIMOX, annealing, oxidation, Si, | | | Summary | Full Text:PDF(487.1KB) | |
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SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen
Sadao NAKASHIMA Katsutoshi IZUMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C
No. 12
pp. 1415-1420
Type of Manuscript:
Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword:
SIMOX, implantation, dislocation, oxygen, SOI, | | | Summary | Full Text:PDF(804.4KB) | |
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Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX
Yasuhisa OMURA Sadao NAKASHIMA Katsutoshi IZUMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C
No. 12
pp. 1491-1497
Type of Manuscript:
Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword:
CMOS, SOI, SIMOX, ultrathin, high speed, | | | Summary | Full Text:PDF(604.4KB) | |
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