Sadao NAKASHIMA


High-Quality Low-Dose SIMOX Wafers
Sadao NAKASHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3  pp. 364-369
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword: 
SOISIMOXannealingoxidationSi
 Summary | Full Text:PDF

SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen
Sadao NAKASHIMA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1415-1420
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword: 
SIMOXimplantationdislocationoxygenSOI
 Summary | Full Text:PDF

Investigation on High-Speed Performance of 0.1-µm-Gate, Ultrathin-Film CMOS/SIMOX
Yasuhisa OMURA Sadao NAKASHIMA Katsutoshi IZUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1491-1497
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword: 
CMOSSOISIMOXultrathinhigh speed
 Summary | Full Text:PDF