Ryusuke NEBASHI


28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation
Xu BAI Ryusuke NEBASHI Makoto MIYAMURA Kazunori FUNAHASHI Naoki BANNO Koichiro OKAMOTO Hideaki NUMATA Noriyuki IGUCHI Tadahiko SUGIBAYASHI Toshitsugu SAKAMOTO Munehiro TADA 
Publication:   
Publication Date: 2022/10/01
Vol. E105-C  No. 10  pp. 627-630
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
FPGAatom switchnon-volatileresistive-change memory (RRAM)programmable logicstatic timing analysis (STA)
 Summary | Full Text:PDF(1.6MB)

Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros
Ryusuke NEBASHI Noboru SAKIMURA Tadahiko SUGIBAYASHI Naoki KASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/04/01
Vol. E92-C  No. 4  pp. 417-422
Type of Manuscript:  Special Section PAPER (Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era)
Category: 
Keyword: 
MRAMembedded memorySoCsystem LSI
 Summary | Full Text:PDF(579.7KB)