Ryo HATTORI

A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module
Teruyuki SHIMURA Tomoyuki ASADA Satoshi SUZUKI Takeshi MIURA Jun OTSUJI Ryo HATTORI Yukio MIYAZAKI Kazuya YAMAMOTO Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/07/01
Vol. E88-C  No. 7  pp. 1495-1501
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
GSM/EDGE dual mode, power amplifier module, InGaP HBT, diode switch, Rx-noise, 
 Summary | Full Text:PDF(1.2MB)
Analysis of a Phase Factor of Franz-Keldysh Oscillations in GaAs/AlGaAs Heterostructures
Hideo TAKEUCHI Yoshitsugu YAMAMOTO Ryo HATTORI Takahide ISHIKAWA Masaaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2015-2021
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaAs/AlGaAs heterostructures, photoreflectance, Franz-Keldysh oscillations, 
 Summary | Full Text:PDF(507.7KB)
Direct Measurement of the Maximum Operating Region in AlGaAs HBTs for RF Power Amplifiers
Akira INOUE Shigenori NAKATSUKA Satoshi SUZUKI Kazuya YAMAMOTO Teruyuki SHIMURA Ryo HATTORI Yasuo MITSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8  pp. 1451-1457
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
maximum operating region, measurement, waveform, power amplifier, HBT, 
 Summary | Full Text:PDF(728.4KB)
Electromigration and Diffusion of Gold in GaAs IC Interconnections
Akira OHTA Kotaro YAJIMA Norio HIGASHISAKA Tetsuya HEIMA Takayuki HISAKA Ryo HATTORI Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11  pp. 1932-1939
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
electromigration, diffusion, GaAs IC, high temperature, high current density, 
 Summary | Full Text:PDF(2MB)
High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
Teruyuki SHIMURA Takeshi MIURA Yutaka UNEME Hirofumi NAKANO Ryo HATTORI Mutsuyuki OTSUBO Kazutomi MORI Akira INOUE Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 740-745
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction bipolar transistor, digital cellular phone, individual thermal shunt, emitter air-bridge, bias mode, 
 Summary | Full Text:PDF(588.7KB)