Ryo DANG


Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State
Hirobumi KAWASHIMA Ryo DANG (or DAN) 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 894-899
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationnon-isothermalSi MOSFETtransient statebreakdown
 Summary | Full Text:PDF(497.8KB)

Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence
Hirobumi KAWASHIMA Ryo DANG 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1997/10/25
Vol. E80-A  No. 10  pp. 1973-1978
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: 
Keyword: 
device simulationnon-isothermalheat flowself-heatingSi MOSFETnegative resistance
 Summary | Full Text:PDF(427.9KB)

Modeling a U-Shaped Gate MOSFET -A Model for Threshold Voltage-
Ryo DANG Toshiaki KOJIMA Yutaka AKIYAMA Mitsutoshi NAKAMURA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 243-245
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Silicon Devices and Integrated Circuits
Keyword: 
 Summary | Full Text:PDF(154.7KB)