Ryo DANG (or DAN)


Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State
Hirobumi KAWASHIMA Ryo DANG (or DAN) 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 894-899
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationnon-isothermalSi MOSFETtransient statebreakdown
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