Robert W. DUTTON


TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADdevice simulationprocess simulationIC technologydiffusionion implantationoxidationMOS scalingmodelinghierarchyatomic-scale phenomena
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Large Signal Analysis of RF Circuits in Device Simulation
Zhiping YU Robert W. DUTTON Boris TROYANOSKY Junko SATO-IWANAGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 908-916
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationRFlarge signaldistortion analysisharmonic balance
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Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations
N. R. ALURU Kincho H. LAW Peter M. PINSKY Arthur RAEFSKY Ronald J. G. GOOSSENS Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 227-235
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Numerics
Keyword: 
semiconductor deviceshydrodynamic modelGalerkin/least-squares finite element methodspace-time formulation
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Numerical Techniques on Enhancing Robustness for Stress-Dependent Oxidation Simulation Using Finite Element Method in SUPREM-IV
Yoshinori ODA Kaung-Shia YU Thye-Lai TUNG Arthur RAEFSKY Donald L. SCHARFETTER Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 150-155
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
simulationoxidationfinite element methodstress
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