Risho KOH

Simulated Device Design Optimization to Reduce the Floating Body Effect for Sub-Quarter Micron Fully Depleted SOI-MOSFETs
Risho KOH Tohru MOGAMI Haruo KATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7  pp. 893-898
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
SOIMOSFETfloating body effectsimulationapplicable voltage
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