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Pierre-Yves LESAICHERRE
Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs
Satoshi KAMIYAMA
Hiroshi SUZUKI
Pierre-Yves LESAICHERRE
Akihiko ISHITANI
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
1994/03/25
Vol.
E77-C
No.
3
pp.
379-384
Type of Manuscript:
Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category:
Device Technology
Keyword:
tantalum oxide
,
rapid thermal nitridation (RTN)
,
SiO
2
equivalent thickness
,
leakage current
,
time dependent dielectric breakdown (TDDB)
,
Summary
|
Full Text:PDF
(583.2KB)
Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI
Pierre-Yves LESAICHERRE
Satoshi KAMIYAMA
Koichi ANDO
Hirohito WATANABE
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
1993/11/25
Vol.
E76-C
No.
11
pp.
1564-1581
Type of Manuscript:
INVITED PAPER (Special Issue on LSI Memories)
Category:
Keyword:
capacitor
,
dielectrics
,
Si
3
N
4
,
Ta
2
O
5
,
high permittivity materials
,
256 Mbit
,
1 Gbit
,
DRAM
,
Summary
|
Full Text:PDF
(1.8MB)