Pierre-Yves LESAICHERRE

Highly Reliable Ultra-Thin Tantalum Oxide Capacitors for ULSI DRAMs
Satoshi KAMIYAMA Hiroshi SUZUKI Pierre-Yves LESAICHERRE Akihiko ISHITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
tantalum oxide, rapid thermal nitridation (RTN), SiO2 equivalent thickness, leakage current, time dependent dielectric breakdown (TDDB), 
 Summary | Full Text:PDF(583.2KB)
Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI Pierre-Yves LESAICHERRE Satoshi KAMIYAMA Koichi ANDO Hirohito WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11  pp. 1564-1581
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
capacitor, dielectrics, Si3N4, Ta2O5, high permittivity materials, 256 Mbit, 1 Gbit, DRAM, 
 Summary | Full Text:PDF(1.8MB)