Paolo CIAMPOLINI

A Custom VLSI Architecture for the Solution of FDTD Equations
Pisana PLACIDI Leonardo VERDUCCI Guido MATRELLA Luca ROSELLI Paolo CIAMPOLINI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/03/01
Vol. E85-C  No. 3  pp. 572-577
Type of Manuscript:  Special Section PAPER (Special Issue on Signals, Systems and Electronics Technology)
Category: Circuit
Keyword: 
FDTD method, digital arithmetic, very-large scale integration, VHDL language, 
 Summary | Full Text:PDF
A Unified Model for the Simulation of Small-Geometry Devices
Anna PIERANTONI Paolo CIAMPOLINI Andrea LIUZZO Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 139-147
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
TCAD, device simulation, hot-electron effects, electro-thermal effects, 
 Summary | Full Text:PDF
Comparison between a posteriori Error Indicators for Adaptive Mesh Generation in Semiconductor Device Simulation
Katsuhiko TANAKA Paolo CIAMPOLINI Anna PIERANTONI Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 214-219
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Numerics
Keyword: 
device simulation, mesh generation, error indicators, 
 Summary | Full Text:PDF
Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs
Anna PIERANTONI Paolo CIAMPOLINI Antonio GNUDI Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2  pp. 181-188
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
TCAD, device simulation, hot-electron effects, recessed-oxide MOSFETs, 
 Summary | Full Text:PDF