Osamu ISHIHARA

GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets
Masaaki SHIMADA Norio HIGASHISAKA Akira OHTA Kenji HOSOGI Kazuo KUBO Noriyuki TANINO Tadashi TAKAGI Fuminobu HIDANI Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 503-511
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
multiplexer, demultiplexer, GaAs, 10 Gb/s, SCFL, DCFL, 
 Summary | Full Text:PDF
A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO Tadashi TAKAGI Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 573-579
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
millimeter-wave, low noise figure, MMIC, dual gate, gain control, 
 Summary | Full Text:PDF
A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1279-1285
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMT, AlInAs/InGaAs, InP, low-noise, selectiverecess, 
 Summary | Full Text:PDF