Nobuo SASAKI


A 2 Gb/s 1.8 pJ/bit Differential BPSK UWB-IR Transmitter Using 65 nm CMOS Technology
Mohiuddin HAFIZ Shinichi KUBOTA Nobuo SASAKI Kentaro KIMOTO Takamaro KIKKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/06/01
Vol. E94-C  No. 6  pp. 977-984
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
UWB-IRdifferentialGaussian monocycle pulsetransmitterBPSK
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A 500 Mb/s Differential Input Non-coherent BPSK Receiver for UWB-IR Communication
Mohiuddin HAFIZ Nobuo SASAKI Takamaro KIKKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4  pp. 567-574
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
UWB-IRBPSKCMOSnon-coherentreceiver
 Summary | Full Text:PDF

A 1 Gb/s 3.8 pJ/bit Differential Input BPSK Detection Scheme for UWB-IR Communication Using 180 nm CMOS Technology
Mohiuddin HAFIZ Nobuo SASAKI Takamaro KIKKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/02/01
Vol. E94-C  No. 2  pp. 240-247
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
UWB-IRGaussian Monocycle PulseCMOS detection schemeBPSK modulation
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Polyacetylene for Soliton Devices
Nobuo SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/07/25
Vol. E76-C  No. 7  pp. 1056-1063
Type of Manuscript:  INVITED PAPER (Special Issue on New Architecture LSIs)
Category: 
Keyword: 
polyacetylenesolitonLSIone-dimensional conductormolecular device
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Characterization of the Laser-Recrystallized Single-Crystalline Si-SiO2 Interface
Nobuo SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1430-1437
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword: 
laser-recrystallizationSOIinterface-charge
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