Nobuhiro KUWATA


Low Consumption Power Application of Pulse-Doped GaAs MESFET's
Nobuo SHIGA Kenji OTOBE Nobuhiro KUWATA Ken-ichiro MATSUZAKI Shigeru NAKAJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/25
Vol. E80-C  No. 4  pp. 597-603
Type of Manuscript:  PAPER
Category: Quantum Electronics
Keyword: 
microwave and millimeter wave technologyGaAs MESFETpower amplifierlow distortionlow consumption power
 Summary | Full Text:PDF(690.4KB)

12 GHz Low-Noise MMIC Amplifier with GaAs Pulse-Doped MESFET's
Nobuo SHIGA Shigeru NAKAJIMA Nobuhiro KUWATA Kenji OTOBE Takeshi SEKIGUCHI Ken-ichiro MATSUZAKI Hideki HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1500-1506
Type of Manuscript:  PAPER
Category: Microwave and Millimeter Wave Technology
Keyword: 
MMIClow-noiseamplifierGaAs MESFET
 Summary | Full Text:PDF(650.4KB)