Nobuhiko SATO


Gain Improvement of a 2.4-GHz/5-GHz CMOS Low Noise Amplifier by Using High-Resistivity Silicon-on-Insulator Wafers
Junichi KODATE Mamoru UGAJIN Tsuneo TSUKAHARA Takakuni DOUSEKI Nobuhiko SATO Takehito OKABE Kazuaki OHMI Takao YONEHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6  pp. 1041-1049
Type of Manuscript:  Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
RFICCMOSLNAsilicon-on-insulatorSOI
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Current Progress in Epitaxial Layer Transfer (ELTRAN(R))
Kiyofumi SAKAGUCHI Nobuhiko SATO Kenji YAMAGATA Tadashi ATOJI Yasutomo FUJIYAMA Jun NAKAYAMA Takao YONEHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3  pp. 378-387
Type of Manuscript:  INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword: 
porousBESOIpre-injectionstructure-sensitive etchinghydrogen annealingedge exclusionbatch process
 Summary | Full Text:PDF