Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA Narihito MATSUMOTO Takeshi NAMEGAYA Yoshihiro IMAJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1541-1554
Type of Manuscript:  PAPER
Category: Opto-Electronics
GRIN-SCH-MQWMOCVDGaInAsP/InPburied heterostructurelaser diodes
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Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process
Akihiko KASUKAWA Masayuki IWASE Narihito MATSUMOTO Toshihiko MAKINO Susumu KASHIWA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/09/25
Vol. E71-E  No. 9  pp. 837-839
Type of Manuscript:  LETTER
Category: Quantum Electronics
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