Naoya OKAMOTO


Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers
Masaru SATO Yoshitaka NIIDA Atsushi YAMADA Junji KOTANI Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Norikazu NAKAMURA 
Publication:   
Publication Date: 2021/10/01
Vol. E104-C  No. 10  pp. 480-487
Type of Manuscript:  INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
GaN power amplifierInAlGaN/GaN HEMTmillimeter-wavepower amplifiertransmission line transformerwide bandwidth
 Summary | Full Text:PDF(1.6MB)

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
Shinpei YAMASHITA Michihiko SUHARA Kenichi KAWAGUCHI Tsuyoshi TAKAHASHI Masaru SATO Naoya OKAMOTO Kiyoto ASAKAWA 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 462-465
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
backward diodesGaAsSb/InGaAsequivalent circuitvoltage sensitivity
 Summary | Full Text:PDF(2.3MB)

Millimeter-Wave GaN HEMT for Power Amplifier Applications
Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10  pp. 923-929
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMTMillimeter-wavePower amplifierDevice modeling
 Summary | Full Text:PDF(2.1MB)