Naoya OKAMOTO


Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
Shinpei YAMASHITA Michihiko SUHARA Kenichi KAWAGUCHI Tsuyoshi TAKAHASHI Masaru SATO Naoya OKAMOTO Kiyoto ASAKAWA 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 462-465
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
backward diodesGaAsSb/InGaAsequivalent circuitvoltage sensitivity
 Summary | Full Text:PDF(2.3MB)

Millimeter-Wave GaN HEMT for Power Amplifier Applications
Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10  pp. 923-929
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMTMillimeter-wavePower amplifierDevice modeling
 Summary | Full Text:PDF(2.1MB)