Naoto MATSUO

Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation
Akira HEYA Naoto MATSUO Kazuhiro KANDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/04/01
Vol. E99-C  No. 4  pp. 474-480
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
boron dopant, low-temperature activation, soft X-ray irradiation, sheet resistance, electron excitation, depth profile, 
 Summary | Full Text:PDF(805.2KB)
Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film
Takahiro KOBAYASHI Naoto MATSUO Akira HEYA Shin YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11  pp. 1112-1116
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
TFT, SiNX film, fixed charge, hump phenomenon, 
 Summary | Full Text:PDF(1.3MB)
Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing
Akira HEYA Naoto MATSUO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10  pp. 1516-1517
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
pentacene, organic thin-film transistors, atomic hydrogen annealing, crystal orientation, carrier mobility, 
 Summary | Full Text:PDF(257.7KB)
Role of Hydrogen in Polycrystallne Si by Excimer Laser Annealing
Naoya KAWAMOTO Naoto MATSUO Atsushi MASUDA Yoshitaka KITAMON Hideki MATSUMURA Yasunori HARADA Tadaki MIYOSHI Hiroki HAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/02/01
Vol. E88-C  No. 2  pp. 241-246
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
polycrystalline Si, excimer laser annealing, hydrogen, secondary grain growth, stress relaxation, Cat-CVD, 
 Summary | Full Text:PDF(649.7KB)
Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1 µm Era
Naoto MATSUO Yoshinori TAKAMI Takahiro NOZAKI Hiroki HAMADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1086-1090
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
SRTMOST, sub-0.1 µm, logic circuit, 
 Summary | Full Text:PDF(416.5KB)