Naoteru SHIGEKAWA


Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1212-1217
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNHEMTthreshold voltagepiezoelectric effectsfilm stress
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Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
Masanobu HIROKI Narihiko MAEDA Naoteru SHIGEKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 579-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaN-based FETsHEMTsInAlNAlInNAlGaN
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Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Kenji SHIOJIMA Naoteru SHIGEKAWA Tetsuya SUEMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12  pp. 1968-1970
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
GaNHEMTburied p-layercarrier confinement
 Summary | Full Text:PDF