Naotaka KURODA


High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
Akio WAKEJIMA Kohji MATSUNAGA Yuji ANDO Tatsuo NAKAYAMA Yasuhiro OKAMOTO Kazuki OTA Naotaka KURODA Masahiro TANOMURA Hironobu MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 929-936
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
GaN-FETamplifiermemory effectsbaseband impedancedigital predistortionW-CDMA
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