Naotaka IWATA


1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Fumio HARIMA Yasunori BITO Hidemasa TAKAHASHI Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1104-1108
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
enhancement modehetero-junction FETspower amplifiers
 Summary | Full Text:PDF

High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station
Kouji ISHIKURA Isao TAKENAKA Hidemasa TAKAHASHI Kouichi HASEGAWA Kazunori ASANO Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 923-928
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
heterojunction FETshigh-voltage operationpower amplifiersfield-modulating-plate
 Summary | Full Text:PDF

1.0 V Operation Power Heterojunction FET for Digital Cellular Phones
Takehiko KATO Yasunori BITO Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2  pp. 249-252
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
power amplifierheterojunction FETlow voltage operationon-resistance
 Summary | Full Text:PDF

Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations
Gary HAU Takeshi B. NISHIMURA Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1928-1935
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
FETmicrowaveamplifierdistortionsimulationW-CDMA
 Summary | Full Text:PDF

Single 1. 5 V Operation Power Amplifier MMIC with SrTiO3 Capacitors for 2. 4 GHz Wireless Applications
Takeshi B. NISHIMURA Naotaka IWATA Keiko YAMAGUCHI Masatoshi TOMITA Yasunori BITO Koichi TAKEMURA Yoichi MIYASAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 898-903
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
wireless LANMMICpower amplifierheterojunction FETSrTiO3low voltagesingle voltage supply
 Summary | Full Text:PDF

Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1241-1245
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
heterojunction FETpower devicelow-voltage operationpower-added efficiencypersonal digital cellularadjacent channel leakage power
 Summary | Full Text:PDF

Step-Recessed Gate Structure with an Undoped Surface Layer for Microwave and Millimeter-Wave High Power, High Efficiency GaAs MESFETs
Hidemasa TAKAHASHI Kazunori ASANO Kouji MATSUNAGA Naotaka IWATA Akira MOCHIZUKI Hiromitsu HIRAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4141-4146
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
 Summary | Full Text:PDF