Naoko ONO


135GHz 98mW 10Gbps CMOS Amplitude Shift Keying Transmitter and Receiver Chipset
Mizuki MOTOYOSHI Naoko ONO Kosuke KATAYAMA Kyoya TAKANO Minoru FUJISHIMA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2014/01/01
Vol. E97-A  No. 1  pp. 86-93
Type of Manuscript:  Special Section PAPER (Special Section on Wideband Systems)
Category: Implementation
Keyword: 
CMOSD-bandhigh-speedwirelessASK transceivershort-millimeter-wave
 Summary | Full Text:PDF

A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS
Tong WANG Toshiya MITOMO Naoko ONO Shigehito SAIGUSA Osamu WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6  pp. 796-803
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
broadband amplifiersmillimeter wave integrated circuitspower amplifiers
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A 60-GHz Phase-Locked Loop with Inductor-Less Wide Operation Range Prescaler in 90-nm CMOS
Hiroaki HOSHINO Ryoichi TACHIBANA Toshiya MITOMO Naoko ONO Yoshiaki YOSHIHARA Ryuichi FUJIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/06/01
Vol. E92-C  No. 6  pp. 785-791
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
PLLsynthesizerVCOILFDphase noise
 Summary | Full Text:PDF

A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds
Naoko ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6  pp. 1010-1012
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
RF groundHEMTcoplanar waveguideamplifierV-band
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Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits
Naoko ONO Ken ONODERA Kazuhiro ARAI Keiichi YAMAGUCHI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5  pp. 733-741
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
K-banddriver amplifierfilter circuitHEMT
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Characteristics of GaAs HEMTs with Flip-Chip Interconnections
Naoko ONO Fumio SASAKI Kazuhiro ARAI Hiroyuki YOSHINAGA Yuji ISEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/12/01
Vol. E86-C  No. 12  pp. 2452-2461
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
GaAsHEMTflip-chip interconnectioncurrent pathinverted microstrip line
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V-Band HEMT MMICs Using BCB Thin-Film Layers on GaAs Substrates
Naoko ONO Keiichi YAMAGUCHI Minoru AMANO Masayuki SUGIURA Yuji ISEKI Eiji TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1528-1534
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
BCBthin-film layerV-bandHEMTMMIC
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60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates
Naoko ONO Yumi FUCHIDA Junko ONOMURA Minoru AMANO Masayuki SUGIURA Kunio YOSHIHARA Eiji TAKAGI Mitsuo KONNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/07/25
Vol. E82-C  No. 7  pp. 1073-1079
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: Active Devices and Circuits
Keyword: 
BCBV-bandHEMTMMICamplifier
 Summary | Full Text:PDF