Naoko MATSUYAMA


A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
Toshihiro MATSUDA Naoko MATSUYAMA Kiyomi HOSOI Etsumasa KAMEDA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4  pp. 593-601
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThot carriersphotoemissionjunction breakdown
 Summary | Full Text:PDF

Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90and 45
Takashi OHZONE Naoko MATSUYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 172-178
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
MOSFETelectrical characteristics45 CMOSFET
 Summary | Full Text:PDF