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| Naoko MATSUYAMA
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Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90 and 45
Takashi OHZONE Naoko MATSUYAMA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C
No. 2
pp. 172-178
Type of Manuscript:
Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword:
MOSFET, electrical characteristics, 45 CMOSFET, | | | Summary | Full Text:PDF | |
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CMOSFET