Naoki YOKOYAMA


Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
Naoki HARADA Shintaro SATO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/03/01
Vol. E98-C  No. 3  pp. 283-286
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETtransition metal dichalcogenideshort-channel effectsdevice simulationhigh-k dielectric
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InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot(TSR-QD)Technology
Yuji AWANO Yoshiki SAKUMA Yoshihiro SUGIYAMA Takashi SEKIGUCHI Shunichi MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11  pp. 1557-1561
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
nanometer technologyquantum dotMOVPEcathodoluminescencephotoluminescenceself-organization
 Summary | Full Text:PDF(716.3KB)

Selective Growth of GaAs by Pulsed-Jet Epitaxy
Yoshiki SAKUMA Shunich MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1414-1419
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
selective epitaxyatomic layer epitaxy (ALE)MOVPEpulsed-jet epitaxyGaAsSiO2 mask
 Summary | Full Text:PDF(941.4KB)

A 1/2 Frequency Divider Using Resonant-Tunneling Hot Electron Transistors (RHETs)
Motomu TAKATSU Kenichi IMAMURA Hiroaki OHNISHI Toshihiko MORI Takami ADACHIHARA Shunichi MUTO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/08/25
Vol. E75-C  No. 8  pp. 918-921
Type of Manuscript:  Special Section PAPER (Special Issue on Cryogenic Microwave Devices)
Category: Active Devices
Keyword: 
resonant-tunnelinghot electron rtansistorfrequency dividercircuit designoperation test
 Summary | Full Text:PDF(499.8KB)