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N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching Naoki HARADA Shigeru KURODA Kohki HIKOSAKA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C
No. 10
pp. 1165-1171
Type of Manuscript:
Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits) Category: Keyword: HEMT, InGaAs, Schottky junction, DCEL, dry etching, | | Summary | Full Text:PDF(559.3KB) | |
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