Naohito YOSHIDA


A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
Seiki GOTO Kenichi FUJII Tetsuo KUNII Satoshi SUZUKI Hiroshi KAWATA Shinichi MIYAKUNI Naohito YOSHIDA Susumu SAKAMOTO Takashi FUJIOKA Noriyuki TANINO Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1936-1942
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
high-power FETHFETbase stationlow distortionmicrowave
 Summary | Full Text:PDF

A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO Tadashi TAKAGI Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 573-579
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
millimeter-wavelow noise figureMMICdual gategain control
 Summary | Full Text:PDF

Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
Kazuhiko NAKAHARA Yasushi ITOH Yoshie HORIIE Takeshi SAKURA Naohito YOSHIDA Takayuki KATOH Tadashi TAKAGI Yasuo MITSUI Yasuyuki ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1210-1215
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
amplifierlow noiseMMICmillimeter-waveHEMT
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A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1279-1285
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMTAlInAs/InGaAsInPlow-noiseselectiverecess
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An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT
Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 318-321
Type of Manuscript:  LETTER
Category: Electromagnetic Theory
Keyword: 
millimeter-wavelow noise figureMMICAlGaAs/InGaAs Pseudomorphic HEMTmodeling
 Summary | Full Text:PDF