Naoaki TAKEBE


Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Naoaki TAKEBE Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 917-920
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancein situ etching
 Summary | Full Text:PDF

Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
Naoaki TAKEBE Takashi KOBAYASHI Hiroyuki SUZUKI Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 830-834
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistorInPMOCVDCBr4
 Summary | Full Text:PDF