Nan LIAO


Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology
Tian WANG Xiaoxin CUI Kai LIAO Nan LIAO Xiaole CUI Dunshan YU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/08/01
Vol. E99-C  No. 8  pp. 974-983
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
VLSIFinFETstandard cellstackingback biasing
 Summary | Full Text:PDF

Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices
Kai LIAO XiaoXin CUI Nan LIAO KaiSheng MA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/08/01
Vol. E96-C  No. 8  pp. 1068-1075
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
leakage current reductionadiabatic circuitsFinFETspower consumptionlimiting frequencynoise immunity
 Summary | Full Text:PDF

A Novel Power MOSFET Structure with Shallow Junction Dual Well Design
Chien-Nan LIAO Feng-Tso CHIEN Chi-Ling WANG Hsien-Chin CHIU Yi-Jen CHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 937-942
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
power VDMOSFETshallow dual wellgate chargeavalanche breakdown
 Summary | Full Text:PDF

High Performance Power MOSFETs by Wing-Cell Structure Design
Feng-Tso CHIEN Chien-Nan LIAO Chi-Ling WANG Hsien-Chin CHIU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 591-595
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
Power MOSFETclosed cellwing cellgate-drain charge (Qgd)
 Summary | Full Text:PDF