Motoaki IWAYA


Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
Yoshikazu HIROSE Akira HONSHIO Takeshi KAWASHIMA Motoaki IWAYA Satoshi KAMIYAMA Michinobu TSUDA Hiroshi AMANO Isamu AKASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1064-1067
Type of Manuscript:  Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HEMTcontact resistancetransconductance
 Summary | Full Text:PDF(459.4KB)

Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes
Toshiyuki SATO Motoaki IWAYA Kimio ISOMURA Tsutomu UKAI Satoshi KAMIYAMA Hiroshi AMANO Isamu AKASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/04/25
Vol. E83-C  No. 4  pp. 573-578
Type of Manuscript:  Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaN-based semiconductor laser-diodetransverse-moderidge-waveguide structure2-step grown index-guided structure
 Summary | Full Text:PDF(1009.8KB)