Mitsuru YAMAJI


Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
Ken-ichiro SONODA Mitsuru YAMAJI Kenji TANIGUCHI Chihiro HAMAGUCHI Tatsuya KUNIKIYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 274-280
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
nonlocal impact ionizationsubstrate currentMonte Carlo simulationdevice simulationdrift-diffusion model
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Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics--Optical and Electrical Evaluation--
Mitsuru YAMAJI Kenji TANIGUSHI Chihiro HAMAGUCHI Kazuo SUKEGAWA Seiichiro KAWAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 373-378
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
SOI-MOSFEThot carrierphoton emissionhole trapimpact-ionizationelectron-hole recombination
 Summary | Full Text:PDF